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ddr3 sdram udimm mt18jsf25672az C 2gb mt18jsf51272az C 4gb MT18JSF1G72AZ C 8gb features ? ddr3 functionality and operations supported as defined in the component data sheet ? 240-pin, unbuffered dual in-line memory module (udimm) ? fast data transfer rates: pc3-14900, pc3-12800, pc3-10600, pc3-8500, or pc3-6400 ? 2gb (256 meg x 72), 4gb (512 meg x 72), 8gb (1gig x 72) ? v dd = 1.5v 0.075v ? v ddspd = 3.0C3.6v ? supports ecc error detection and correction ? nominal and dynamic on-die termination (odt) for data, strobe, and mask signals ? dual rank ? on-board i 2 c temperature sensor with integrated serial presence-detect (spd) eeprom ? 8 internal device banks ? fixed burst chop (bc) of 4 and burst length (bl) of 8 via the mode register set (mrs) ? selectable bc4 or bl8 on-the-fly (otf) ? gold edge contacts ? halogen-free ? fly-by topology ? terminated control, command, and address bus figure 1: 240-pin udimm (mo-269 r/c e3) module height: 30.0mm (1.181in) options marking ? operating temperature C commercial (0c t a +70c) none ? package C 240-pin dimm (halogen-free) z ? frequency/cas latency C 1.07ns @ cl = 13 (ddr3-1866) -1g9 C 1.25ns @ cl = 11 (ddr3-1600) -1g6 C 1.5ns @ cl = 9 (ddr3-1333) -1g4 C 1.87ns @ cl = 7 (ddr3-1066) -1g1 table 1: key timing parameters speed grade industry nomenclature data rate (mt/s) t rcd (ns) t rp (ns) t rc (ns) cl = 13 cl = 11 cl = 10 cl = 9 cl = 8 cl = 7 cl = 6 cl = 5 -1g9 pc3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1g6 pc3-12800 C 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1g4 pc3-10600 C C 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1g1 pc3-8500 C C C C 1066 1066 800 667 13.125 13.125 50.625 -1g0 pc3-8500 C C C C 1066 C 800 667 15 15 52.5 -80b pc3-6400 C C C C C C 800 667 15 15 52.5 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm features pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 1 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. products and specifications discussed herein are subject to change by micron without notice. http://
table 2: addressing parameter 2gb 4gb 8gb refresh count 8k 8k 8k row address 16k a[13:0] 32k a[14:0] 64k a[15:0] device bank address 8 ba[2:0] 8 ba[2:0] 8 ba[2:0] device configuration 1gb (128 meg x 8) 2gb (256 meg x 8) 4gb (512 meg x 8) column address 1k a[9:0] 1k a[9:0] 1k a[9:0] module rank address 2 s#[1:0] 2 s#[1:0] 2 s#[1:0] table 3: part numbers and timing parameters C 2gb modules base device: mt41j128m8, 1 1gb ddr3 sdram part number 2 module density configuration module bandwidth memory clock/ data rate clock cycles (cl- t rcd- t rp) mt18jsf25672az-1g6__ 2gb 256 meg x 72 12.8 gb/s 1.25ns/1600 mt/s 11-11-11 mt18jsf25672az-1g4__ 2gb 256 meg x 72 10.6 gb/s 1.5ns/1333 mt/s 9-9-9 mt18jsf25672az-1g1__ 2gb 256 meg x 72 8.5 gb/s 1.87ns/1066 mt/s 7-7-7 table 4: part numbers and timing parameters C 4gb modules base device: mt41j256m8, 1 2gb ddr3 sdram part number 2 module density configuration module bandwidth memory clock/ data rate clock cycles (cl- t rcd- t rp) mt18jsf51272az-1g9__ 4gb 512 meg x 72 14.9 gb/s 1.07ns/1866 mt/s 13-13-13 mt18jsf51272az-1g6__ 4gb 512 meg x 72 12.8 gb/s 1.25ns/1600 mt/s 11-11-11 mt18jsf51272az-1g4__ 4gb 512 meg x 72 10.6 gb/s 1.5ns/1333 mt/s 9-9-9 mt18jsf51272az-1g1__ 4gb 512 meg x 72 8.5 gb/s 1.87ns/1066 mt/s 7-7-7 table 5: part numbers and timing parameters C 8gb modules base device: mt41j512m8, 1 4gb ddr3 sdram part number 2 module density configuration module bandwidth memory clock/ data rate clock cycles (cl- t rcd- t rp) MT18JSF1G72AZ-1g9__ 8gb 1 gig x 72 14.9 gb/s 1.07ns/1866 mt/s 13-13-13 MT18JSF1G72AZ-1g6__ 8gb 1 gig x 72 12.8 gb/s 1.25ns/1600 mt/s 11-11-11 MT18JSF1G72AZ-1g4__ 8gb 1 gig x 72 10.6 gb/s 1.5ns/1333 mt/s 9-9-9 mt18jsf1g72a(i)z-1g1__ 8gb 1 gig x 72 8.5 gb/s 1.87ns/1066 mt/s 7-7-7 notes: 1. the data sheet for the base device can be found on microns web site. 2. all part numbers end with a two-place code (not shown) that designates component and pcb revisions. con- sult factory for current revision codes. example: MT18JSF1G72AZ-1g9 j1. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm features pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 2 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
pin assignments table 6: pin assignments 240-pin ddr3 udimm front 240-pin ddr3 udimm back pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol pin symbol 1 v refdq 31 dq25 61 a2 91 dq41 121 v ss 151 v ss 181 a1 211 v ss 2 v ss 32 v ss 62 v dd 92 v ss 122 dq4 152 dm3 182 v dd 212 dm5 3 dq0 33 dqs3# 63 ck1 93 dqs5# 123 dq5 153 nc 183 v dd 213 nc 4 dq1 34 dqs3 64 ck1# 94 dqs5 124 v ss 154 v ss 184 ck0 214 v ss 5 v ss 35 v ss 65 v dd 95 v ss 125 dm0 155 dq30 185 ck0# 215 dq46 6 dqs0# 36 dq26 66 v dd 96 dq42 126 nc 156 dq31 186 v dd 216 dq47 7 dqs0 37 dq27 67 v refca 97 dq43 127 v ss 157 v ss 187 event# 217 v ss 8 v ss 38 v ss 68 nc 98 v ss 128 dq6 158 cb4 188 a0 218 dq52 9 dq2 39 cb0 69 v dd 99 dq48 129 dq7 159 cb5 189 v dd 219 dq53 10 dq3 40 cb1 70 a10 100 dq49 130 v ss 160 v ss 190 ba1 220 v ss 11 v ss 41 v ss 71 ba0 101 v ss 131 dq12 161 dm8 191 v dd 221 dm6 12 dq8 42 dqs8# 72 v dd 102 dqs6# 132 dq13 162 nc 192 ras# 222 nc 13 dq9 43 dqs8 73 we# 103 dqs6 133 v ss 163 v ss 193 s0# 223 v ss 14 v ss 44 v ss 74 cas# 104 v ss 134 dm1 164 cb6 194 v dd 224 dq54 15 dqs1# 45 cb2 75 v dd 105 dq50 135 nc 165 cb7 195 odt0 225 dq55 16 dqs1 46 cb3 76 s1# 106 dq51 136 v ss 166 v ss 196 a13 226 v ss 17 v ss 47 v ss 77 odt1 107 v ss 137 dq14 167 nu 197 v dd 227 dq60 18 dq10 48 nc 78 v dd 108 dq56 138 dq15 168 reset# 198 nc 228 dq61 19 dq11 49 nc 79 nc 109 dq57 139 v ss 169 cke1 199 v ss 229 v ss 20 v ss 50 cke0 80 v ss 110 v ss 140 dq20 170 v dd 200 dq36 230 dm7 21 dq16 51 v dd 81 dq32 111 dqs7# 141 dq21 171 nf/a15 1 201 dq37 231 nc 22 dq17 52 ba2 82 dq33 112 dqs7 142 v ss 172 nf/a14 2 202 v ss 232 v ss 23 v ss 53 nc 83 v ss 113 v ss 143 dm2 173 v dd 203 dm4 233 dq62 24 dqs2# 54 v dd 84 dqs4# 114 dq58 144 nc 174 a12 204 nc 234 dq63 25 dqs2 55 a11 85 dqs4 115 dq59 145 v ss 175 a9 205 v ss 235 v ss 26 v ss 56 a7 86 v ss 116 v ss 146 dq22 176 v dd 206 dq38 236 v ddspd 27 dq18 57 v dd 87 dq34 117 sa0 147 dq23 177 a8 207 dq39 237 sa1 28 dq19 58 a5 88 dq35 118 scl 148 v ss 178 a6 208 v ss 238 sda 29 v ss 59 a4 89 v ss 119 sa2 149 dq28 179 v dd 209 dq44 239 v ss 30 dq24 60 v dd 90 dq40 120 v tt 150 dq29 180 a3 210 dq45 240 v tt notes: 1. pin 171 is nf for 2gb and 4gb, a15 for 8gb. 2. pin 172 is nf for 2gb, a14 for 4gb and 8gb. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm pin assignments pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 3 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
pin descriptions the pin description table below is a comprehensive list of all possible pins for all ddr3 modules. all pins listed may not be supported on this module. see pin assignments for information specific to this module. table 7: pin descriptions symbol type description ax input address inputs: provide the row address for active commands, and the column ad- dress and auto precharge bit (a10) for read/write commands, to select one location out of the memory array in the respective bank. a10 sampled during a precharge command determines whether the precharge applies to one bank (a10 low, bank selected by bax) or all banks (a10 high). the address inputs also provide the op-code during a load mode command. see the pin assignments table for density-specific addressing information. bax input bank address inputs: define the device bank to which an active, read, write, or precharge command is being applied. ba define which mode register (mr0, mr1, mr2, or mr3) is loaded during the load mode command. ckx, ckx# input clock: differential clock inputs. all control, command, and address input signals are sampled on the crossing of the positive edge of ck and the negative edge of ck#. ckex input clock enable: enables (registered high) and disables (registered low) internal circui- try and clocks on the dram. dmx input data mask (x8 devices only): dm is an input mask signal for write data. input data is masked when dm is sampled high, along with that input data, during a write ac- cess. although dm pins are input-only, dm loading is designed to match that of the dq and dqs pins. odtx input on-die termination: enables (registered high) and disables (registered low) termi- nation resistance internal to the ddr3 sdram. when enabled in normal operation, odt is only applied to the following pins: dq, dqs, dqs#, dm, and cb. the odt input will be ignored if disabled via the load mode command. par_in input parity input: parity bit for ax, ras#, cas#, and we#. ras#, cas#, we# input command inputs: ras#, cas#, and we# (along with s#) define the command being entered. reset# input (lvcmos) reset: reset# is an active low asychronous input that is connected to each dram and the registering clock driver. after reset# goes high, the dram must be reinitial- ized as though a normal power-up was executed. sx# input chip select: enables (registered low) and disables (registered high) the command decoder. sax input serial address inputs: used to configure the temperature sensor/spd eeprom ad- dress range on the i 2 c bus. scl input serial clock for temperature sensor/spd eeprom: used to synchronize communi- cation to and from the temperature sensor/spd eeprom on the i 2 c bus. cbx i/o check bits: used for system error detection and correction. dqx i/o data input/output: bidirectional data bus. dqsx, dqsx# i/o data strobe: differential data strobes. output with read data; edge-aligned with read data; input with write data; center-aligned with write data. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm pin descriptions pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 4 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
table 7: pin descriptions (continued) symbol type description sda i/o serial data: used to transfer addresses and data into and out of the temperature sen- sor/spd eeprom on the i 2 c bus. tdqsx, tdqsx# output redundant data strobe (x8 devices only): tdqs is enabled/disabled via the load mode command to the extended mode register (emr). when tdqs is enabled, dm is disabled and tdqs and tdqs# provide termination resistance; otherwise, tdqs# are no function. err_out# output (open drain) parity error output: parity error found on the command and address bus. event# output (open drain) temperature event: the event# pin is asserted by the temperature sensor when criti- cal temperature thresholds have been exceeded. v dd supply power supply: 1.5v 0.075v. the component v dd and v ddq are connected to the module v dd . v ddspd supply temperature sensor/spd eeprom power supply: 3.0C3.6v. v refca supply reference voltage: control, command, and address v dd /2. v refdq supply reference voltage: dq, dm v dd /2. v ss supply ground. v tt supply termination voltage: used for control, command, and address v dd /2. nc C no connect: these pins are not connected on the module. nf C no function: these pins are connected within the module, but provide no functional- ity. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm pin descriptions pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 5 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
dq map table 8: component-to-module dq map component reference number component dq module dq module pin number component reference number component dq module dq module pin number u1 0 2 9 u2 0 10 18 1 5 123 1 13 132 2 7 129 2 15 138 3 0 3 3 8 12 4 6 128 4 14 137 5 4 122 5 12 131 6 3 10 6 11 19 7 1 4 7 9 13 u3 0 18 27 u4 0 26 36 1 21 141 1 29 150 2 23 147 2 31 156 3 6 21 3 24 30 4 22 146 4 30 155 5 20 140 5 28 149 6 19 28 6 27 37 7 17 22 7 25 31 u5 0 cb2 45 u6 0 34 87 1 cb5 159 1 37 201 2 cb7 165 2 39 207 3 cb0 39 3 33 82 4 cb6 164 4 38 206 5 cb4 158 5 36 200 6 cb3 46 6 35 88 7 cb1 40 7 32 81 u7 0 42 96 u8 0 50 105 1 45 210 1 53 219 2 47 216 2 55 225 3 41 91 3 49 100 4 46 215 4 54 224 5 44 209 5 52 218 6 43 97 6 51 106 7 40 90 7 48 99 u9 0 58 114 u11 0 61 228 1 61 228 1 58 114 2 63 234 2 57 109 3 57 109 3 63 234 4 62 233 4 56 108 5 60 227 5 59 115 6 59 115 6 60 227 7 56 108 7 62 233 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm dq map pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 6 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
table 8: component-to-module dq map (continued) component reference number component dq module dq module pin number component reference number component dq module dq module pin number u12 0 53 219 u13 0 45 210 1 50 105 1 42 96 2 49 100 2 41 91 3 55 225 3 47 216 4 48 99 4 40 90 5 51 106 5 43 97 6 52 218 6 44 209 7 54 224 7 46 215 u14 0 37 201 u15 0 cb5 159 1 34 87 1 cb2 45 2 33 82 2 cb0 39 3 39 207 3 cb7 165 4 32 81 4 cb1 40 5 35 88 5 cb3 46 6 36 200 6 cb4 158 7 38 206 7 cb6 164 u16 0 29 150 u17 0 21 141 1 26 36 1 18 27 2 24 30 2 16 21 3 31 156 3 23 147 4 25 31 4 17 22 5 27 37 5 19 28 6 28 149 6 20 140 7 30 155 7 22 146 u18 0 13 132 u19 0 5 123 1 10 18 1 2 9 2 8 12 2 0 3 3 15 138 3 7 129 4 9 13 4 1 4 5 11 19 5 3 10 6 12 131 6 4 122 7 14 137 7 6 128 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm dq map pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 7 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
functional block diagram figure 2: functional block diagram dq dq dq dq dq dq dq dq zq dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dm cs# dqs dqs# u1 dq dq dq dq dq dq dq dq u19 dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 u6 dq dq dq dq dq dq dq dq u14 dqs0 dqs0# dm0 dqs4 dqs4# dm4 dq8 dq9 dq10 dq11 dq12 dq13 dq14 dq15 u2 dq dq dq dq dq dq dq dq u18 dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 u7 dq dq dq dq dq dq dq dq u13 dqs1 dqs1# dm1 dqs5 dqs5# dm5 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 u3 dq dq dq dq dq dq dq dq u17 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 u8 dq dq dq dq dq dq dq dq u12 dqs2 dqs2# dm2 dqs6 dqs6# dm6 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 u4 dq dq dq dq dq dq dq dq u16 dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 u9 dq dq dq dq dq dq dq dq u11 dqs3 dqs3# dm3 dqs7 dqs7# dm7 cb0 cb1 cb2 cb3 cb4 cb5 cb6 cb7 u5 dq dq dq dq dq dq dq dq u15 dqs8 dqs8# dm8 dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq dq dq dq dq dq dq dq dq zq s1# s0# rank 0: u1Cu9 rank 1: u11Cu19 dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# dm cs# dqs dqs# ba[2:0] a[15/14/13:0] ras# cas# we# cke0 cke1 odt0 odt1 reset# ba[2:0] : ddr3 sdram a[15/14/13:0] : ddr3 sdram ras#: ddr3 sdram cas#: ddr3 sdram we#: ddr3 sdram cke0: rank 0 cke1: rank 1 odt0: rank 0 odt1: rank 1 reset#: ddr3 sdram rank 0 ck0 ck0# ck1 ck1# v refca v ss ddr3 sdram ddr3 sdram v dd v ddspd temperature sensor/ spd eeprom v tt ddr3 sdram ddr3 sdram v refdq clock, command, control, and address line terminations: rank 1 v ss v ss v ss v ss v ss v ss v ss v ss v ss zq v ss zq v ss zq v ss zq v ss zq v ss zq v ss zq v ss zq v ss zq v ss a0 temperature sensor/ spd eeprom a1 a2 sa0 sa1 sda scl evt u10 event# sa2 command, control, and address termination cke[1:0], a[15/14/13:0], ras#, cas#, we#, odt[1:0], ba[2:0], s#[1:0] ddr3 sdram v tt ck ck# ddr3 sdram v dd note: 1. the zq ball on each ddr3 component is connected to an external 240 1% resistor that is tied to ground. it is used for the calibration of the components odt and output driver. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm functional block diagram pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 8 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
general description ddr3 sdram modules are high-speed, cmos dynamic random access memory mod- ules that use internally configured 8-bank ddr3 sdram devices. ddr3 sdram mod- ules use ddr architecture to achieve high-speed operation. ddr3 architecture is essen- tially an 8 n -prefetch architecture with an interface designed to transfer two data words per clock cycle at the i/o pins. a single read or write access for the ddr3 sdram mod- ule effectively consists of a single 8 n -bit-wide, one-clock-cycle data transfer at the inter- nal dram core and eight corresponding n -bit-wide, one-half-clock-cycle data transfers at the i/o pins. ddr3 modules use two sets of differential signals: dqs, dqs# to capture data and ck and ck# to capture commands, addresses, and control signals. differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. fly-by topology ddr3 modules use faster clock speeds than earlier ddr technologies, making signal quality more important than ever. for improved signal quality, the clock, control, com- mand, and address buses have been routed in a fly-by topology, where each clock, con- trol, command, and address pin on each dram is connected to a single trace and ter- minated (rather than a tree structure, where the termination is off the module near the connector). inherent to fly-by topology, the timing skew between the clock and dqs sig- nals can be easily accounted for by using the write-leveling feature of ddr3. temperature sensor with serial presence-detect eeprom thermal sensor operations the temperature from the integrated thermal sensor is monitored and converts into a digital word via the i 2 c bus. system designers can use the user-programmable registers to create a custom temperature-sensing solution based on system requirements. pro- gramming and configuration details comply with jedec standard no. 21-c page 4.7-1, "definition of the tse2002av, serial presence detect with temperature sensor." serial presence-detect eeprom operation ddr3 sdram modules incorporate serial presence-detect. the spd data is stored in a 256-byte eeprom. the first 128 bytes are programmed by micron to comply with je- dec standard jc-45, "appendix x: serial presence detect (spd) for ddr3 sdram mod- ules." these bytes identify module-specific timing parameters, configuration informa- tion, and physical attributes. the remaining 128 bytes of storage are available for use by the customer. system read/write operations between the master (system logic) and the slave eeprom device occur via a standard i 2 c bus using the dimms scl (clock) sda (data), and sa (address) pins. write protect (wp) is connected to v ss , permanently disabling hardware write protection. for further information refer to micron technical note tn-04-42, "memory module serial presence-detect." 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm general description pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 9 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
electrical specifications stresses greater than those listed may cause permanent damage to the module. this is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data sheet is not implied. exposure to ab- solute maximum rating conditions for extended periods may adversely affect reliability. table 9: absolute maximum ratings symbol parameter min max units v dd v dd supply voltage relative to v ss C0.4 1.975 v v in , v out voltage on any pin relative to v ss C0.4 1.975 v table 10: operating conditions symbol parameter min nom max units notes v dd v dd supply voltage 1.425 1.5 1.575 v i vtt termination reference current from v tt C600 C 600 ma v tt termination reference voltage (dc) C command/address bus 0.49 v dd - 20mv 0.5 v dd 0.51 v dd + 20mv v 1 i i input leakage current; any input 0v v in v dd ; v ref input 0v v in 0.95v (all other pins not under test = 0v) address in- puts, ras#, cas#, we#, ba C36 0 36 a s#, cke, odt, ck, ck# C18 0 18 dm C4 0 4 i oz output leakage current; 0v v out v ddq ; dq and odt are disabled; odt is high dq, dqs, dqs# C10 0 10 a i vref v ref supply leakage current; v refdq = v dd /2 or v refca = v dd /2 (all other pins not under test = 0v) C18 0 18 a t a module ambient operating temperature commercial 0 C 70 c 2, 3 t c ddr3 sdram component case operating tempera- ture commercial 0 C 95 c 2, 3, 4 notes: 1. v tt termination voltage in excess of the stated limit will adversely affect the command and address signals voltage margin and will reduce timing margins. 2. t a and t c are simultaneous requirements. 3. for further information, refer to technical note tn-00-08: thermal applications, available on microns web site. 4. the refresh rate is required to double when 85c < t c 95c. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm electrical specifications pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 10 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
dram operating conditions recommended ac operating conditions are given in the ddr3 component data sheets. component specifications are available on microns web site. module speed grades cor- relate with component speed grades, as shown below. table 11: module and component speed grades ddr3 components may exceed the listed module speed grades; module may not be available in all listed speed grades module speed grade component speed grade -2g1 -093 -1g9 -107 -1g6 -125 -1g4 -15e -1g1 -187e -1g0 -187 -80c -25e -80b -25 design considerations simulations micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. however, good signal integrity starts at the system level. micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. power operating voltages are specified at the dram, not at the edge connector of the module. designers must account for any system voltage drops at anticipated power levels to en- sure the required supply voltage is maintained. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm dram operating conditions pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 11 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
i dd specifications table 12: ddr3 i dd specifications and conditions C 2gb (die revision g) values are for the mt41j128m8 ddr3 sdram only and are computed from values specified in the 1gb (128 meg x 8) com- ponent data sheet parameter symbol 1600 1333 1066 units operating current 0: one bank activate-to-precharge i dd0 1 738 693 648 ma operating current 1: one bank activate-to-read-to-precharge i dd1 1 918 873 828 ma precharge power-down current: slow exit i dd2p0 2 216 216 216 ma precharge power-down current: fast exit i dd2p1 2 540 540 450 ma precharge quiet standby current i dd2q 2 720 630 630 ma precharge standby current i dd2n 2 810 720 630 ma precharge standby odt current i dd2nt 1 603 540 540 ma active power-down current i dd3p 2 630 540 540 ma active standby current i dd3n 2 810 720 720 ma burst read operating current i dd4r 1 1368 1233 1053 ma burst write operating current i dd4w 1 1413 1233 1098 ma refresh current i dd5b 1 1638 1593 1548 ma self refresh temperature current: max t c = 85c i dd6 2 144 144 144 ma self refresh temperature current (srt-enabled): max t c = 95c i dd6et 2 180 180 180 ma all banks interleaved read current i dd7 1 2313 2223 1863 ma reset current i dd8 2 252 252 252 ma notes: 1. one module rank in the active i dd ; the other rank in i dd2p0 (slow exit). 2. all ranks in this i dd condition. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm i dd specifications pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 12 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
table 13: ddr3 i dd specifications and conditions C 4gb (die revision m) values are for the mt41j256m8 ddr3 sdram only and are computed from values specified in the 2gb (256 meg x 8) com- ponent data sheet parameter symbol 1600 1333 1066 units operating current 0: one bank activate-to-precharge i dd0 1 738 693 648 ma operating current 1: one bank activate-to-read-to-precharge i dd1 1 828 783 738 ma precharge power-down current: slow exit i dd2p0 2 216 216 216 ma precharge power-down current: fast exit i dd2p1 2 666 576 486 ma precharge quiet standby current i dd2q 2 720 630 540 ma precharge standby current i dd2n 2 774 684 594 ma precharge standby odt current i dd2nt 1 513 468 423 ma active power-down current i dd3p 2 900 810 720 ma active standby current i dd3n 2 990 900 810 ma burst read operating current i dd4r 1 1512 1377 1278 ma burst write operating current i dd4w 1 1413 1278 1143 ma refresh current i dd5b 1 1863 1818 1773 ma self refresh temperature current: max t c = 85c i dd6 2 216 216 216 ma self refresh temperature current (srt-enabled): max t c = 95c i dd6et 2 243 243 243 ma all banks interleaved read current i dd7 1 2268 2133 1998 ma reset current i dd8 2 234 234 234 ma notes: 1. one module rank in the active i dd ; the other rank in i dd2p0 (slow exit). 2. all ranks in this i dd condition. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm i dd specifications pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 13 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
table 14: ddr3 i dd specifications and conditions C 4gb (die revision k) values are for the mt41j256m8 ddr3 sdram only and are computed from values specified in the 2gb (256 meg x 8) com- ponent data sheet parameter symbol 1866 1600 1333 1066 units operating current 0: one bank activate-to-precharge i dd0 1 495 486 477 459 ma operating current 1: one bank activate-to-read-to-pre- charge i dd1 1 630 612 594 558 ma precharge power-down current: slow exit i dd2p0 2 216 216 216 216 ma precharge power-down current: fast exit i dd2p1 2 270 270 270 270 ma precharge quiet standby current i dd2q 2 396 396 396 396 ma precharge standby current i dd2n 2 414 414 414 414 ma precharge standby odt current i dd2nt 1 432 414 396 369 ma active power-down current i dd3p 2 396 396 396 396 ma active standby current i dd3n 2 666 630 594 558 ma burst read operating current i dd4r 1 1098 1008 900 783 ma burst write operating current i dd4w 1 1134 1035 927 819 ma refresh current i dd5b 1 1134 1116 1107 1089 ma self refresh temperature current: max t c = 85c i dd6 2 216 216 216 216 ma self refresh temperature current (srt-enabled): max t c = 95c i dd6et 2 243 243 243 243 ma all banks interleaved read current i dd7 1 1647 1575 1521 1260 ma reset current i dd8 2 234 234 234 234 ma notes: 1. one module rank in the active i dd ; the other rank in i dd2p0 (slow exit). 2. all ranks in this i dd condition. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm i dd specifications pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 14 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
table 15: ddr3 i dd specifications and conditions C 8gb (die revision d) values are for the mt41j512m8 ddr3 sdram only and are computed from values specified in the 4gb (512 meg x 8) com- ponent data sheet parameter symbol 1600 1333 1066 units operating current 0: one bank activate-to-precharge i dd0 1 855 765 720 ma operating current 1: one bank activate-to-read-to-precharge i dd1 1 963 918 873 ma precharge power-down current: slow exit i dd2p0 2 360 360 360 ma precharge power-down current: fast exit i dd2p1 2 666 576 540 ma precharge quiet standby current i dd2q 2 846 756 702 ma precharge standby current i dd2n 2 900 810 720 ma precharge standby odt current i dd2nt 1 558 585 540 ma active power-down current i dd3p 2 1134 1044 954 ma active standby current i dd3n 2 1116 1026 936 ma burst read operating current i dd4r 1 1863 1683 1503 ma burst write operating current i dd4w 1 1665 1485 1305 ma refresh current i dd5b 1 2160 2070 2025 ma self refresh temperature current: max t c = 85c i dd6 2 396 396 396 ma self refresh temperature current (srt-enabled): max t c = 95c i dd6et 2 504 504 504 ma all banks interleaved read current i dd7 1 2790 2430 2070 ma reset current i dd8 2 396 396 396 ma notes: 1. one module rank in the active i dd ; the other rank in i dd2p0 (slow exit). 2. all ranks in this i dd condition. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm i dd specifications pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 15 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
table 16: ddr3 i dd specifications and conditions C 8gb (die revisions e and j) values are for the mt41j512m8 ddr3 sdram only and are computed from values specified in the 4gb (512 meg x 8) com- ponent data sheet parameter symbol 1866 1600 1333 1066 units operating current 0: one bank activate-to-precharge i dd0 1 720 657 585 558 ma operating current 1: one bank activate-to-read-to-pre- charge i dd1 1 792 756 720 693 ma precharge power-down current: slow exit i dd2p0 2 324 324 324 324 ma precharge power-down current: fast exit i dd2p1 2 666 576 504 468 ma precharge quiet standby current i dd2q 2 630 576 504 486 ma precharge standby current i dd2n 2 630 576 522 504 ma precharge standby odt current i dd2nt 1 540 513 477 450 ma active power-down current i dd3p 2 738 684 630 576 ma active standby current i dd3n 2 738 684 630 576 ma burst read operating current i dd4r 1 1728 1575 1422 1269 ma burst write operating current i dd4w 1 1431 1287 1152 1017 ma refresh current i dd5b 1 1620 1557 1494 1458 ma self refresh temperature current: max t c = 85c i dd6 2 360 360 360 360 ma self refresh temperature current (srt-enabled): max t c = 95c i dd6et 2 450 450 450 450 ma all banks interleaved read current i dd7 1 2421 2142 1872 1602 ma reset current i dd8 2 360 360 360 360 ma notes: 1. one module rank in the active i dd ; the other rank in i dd2p0 (slow exit). 2. all ranks in this i dd condition. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm i dd specifications pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 16 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
temperature sensor with serial presence-detect eeprom the temperature sensor continuously monitors the module's temperature and can be read back at any time over the i 2 c bus shared with the spd eeprom. refer to jedec standard no. 21-c page 4.7-1, "definition of the tse2002av, serial presence detect with temperature sensor." serial presence-detect for the latest spd data, refer to micron's spd page: www.micron.com/spd . table 17: temperature sensor with spd eeprom operating conditions parameter/condition symbol min max units supply voltage v ddspd 3.0 3.6 v supply current: v dd = 3.3v i dd C 2.0 ma input high voltage: logic 1; scl, sda v ih 1.45 v ddspd + 1 v input low voltage: logic 0; scl, sda v il C 0.55 v output low voltage: i out = 2.1ma v ol C 0.4 v input current i in C5.0 5.0 a temperature sensing range C C40 125 c temperature sensor accuracy (class b) C C1.0 1.0 c table 18: temperature sensor and eeprom serial interface timing parameter/condition symbol min max units time bus must be free before a new transition can start t buf 4.7 C s sda fall time t f 20 300 ns sda rise time t r C 1000 ns data hold time t hd:dat 200 900 ns start condition hold time t h:sta 4.0 C s clock high period t high 4.0 50 s clock low period t low 4.7 C s scl clock frequency t scl 10 100 khz data setup time t su:dat 250 C ns start condition setup time t su:sta 4.7 C s stop condition setup time t su:sto 4.0 C s 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm temperature sensor with serial presence-detect eeprom pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 17 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
event# pin the temperature sensor also adds the event# pin (open-drain). not used by the spd eeprom, event# is a temperature sensor output used to flag critical events that can be set up in the sensors configuration register. event# has three defined modes of operation: interrupt mode, compare mode, and critical temperature mode. event thresholds are programmed in the 0x01 register using a hysteresis. the alarm window provides a comparison window, with upper and lower limits set in the alarm upper boundary register and the alarm lower boundary register, respectively. when the alarm window is enabled, event# will trigger whenever the temperature is outside the min or max values set by the user. the interrupt mode enables software to reset event# after a critical temperature threshold has been detected. threshold points are set in the configuration register by the user. this mode triggers the critical temperature limit and both the min and max of the temperature window. the compare mode is similar to the interrupt mode, except event# cannot be reset by the user and returns to the logic high state only when the temperature falls below the programmed thresholds. critical temperature mode triggers event# only when the temperature has exceeded the programmed critical trip point. when the critical trip point has been reached, the temperature sensor goes into comparator mode, and the critical event# cannot be cleared through software. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm temperature sensor with serial presence-detect eeprom pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 18 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://
module dimensions figure 3: 240-pin ddr3 udimm 30.50 (1.20) 29.85 (1.175) pin 1 17.3 (0.68) typ 2.50 (0.098) d (2x) 2.30 (0.091) typ 5.0 (0.197) typ 123.0 (4.84) typ 1.0 (0.039) typ 0.80 (0.031) typ 0.75 (0.03) r (8x) 0.76 (0.030) r pin 120 front view 133.50 (5.256) 133.20 (5.244) 47.0 (1.85) typ 71.0 (2.79) typ 9.5 (0.374) typ back view pin 240 pin 121 1.37 (0.054) 1.17 (0.046) 4.0 (0.157) max 2.20 (0.087) typ 1.45 (0.057) typ 3.05 (0.12) typ 54.68 (2.15) typ 3.0 (0.118) 4x typ 23.3 (0.92) typ 0.50 (0.02) r (4x) 0.9 (0.035) typ 1.0 (0.039) r (8x) 15.0 (0.59) (4x) typ 3.1 (0.122) 2x typ 5.1 (0.2) typ 45, 4x u1 u2 u3 u4 u5 u6 u7 u8 u9 u11 u12 u13 u14 u15 u16 u17 u18 u19 u10 notes: 1. all dimensions are in millimeters (inches); max/min or typical (typ) where noted. 2. the dimensional diagram is for reference only. 8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 www.micron.com/productsupport customer comment line: 800-932-4992 micron and the micron logo are trademarks of micron technology, inc. all other trademarks are the property of their respective owners. this data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. although considered final, these specifications are subject to change, as further product development and data characterization some- times occur. 2gb, 4gb, 8gb (x72, ecc, dr) 240-pin ddr3 udimm module dimensions pdf: 09005aef83606b46 jsf18c256_512_1gx72az.pdf - rev. h 10/12 en 19 micron technology, inc. reserves the right to change products or specifications without notice. ? 2009 micron technology, inc. all rights reserved. http://

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